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M 25AA080/25LC080/25C080
8K SPITM Bus Serial EEPROM
Max Clock Frequency 3 MHz 2 MHz 1 MHz Temp Ranges C,I,E C,I C,I PDIP/SOIC
DEVICE SELECTION TABLE
Part Number 25C080 25LC080 25AA080 VCC Range 4.5-5.5V 2.5-5.5V 1.8-5.5V
PACKAGE TYPES
CS SO WP VSS
1 25xx080 2 3 4
8 7 6 5
VCC HOLD SCK SI
FEATURES
* Low power CMOS technology - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical * 1024 x 8 bit organization * 16 byte page * Write cycle time: 5ms max. * Self-timed ERASE and WRITE cycles * Block write protection - Protect none, 1/4, 1/2, or all of array * Built-in write protection - Power on/off data protection circuitry - Write enable latch - Write protect pin * Sequential read * High reliability - Endurance: 1M cycles (guaranteed) - Data retention: > 200 years - ESD protection: > 4000 V * 8-pin PDIP and SOIC * Temperature ranges supported: - Commercial (C): 0C to +70C - Industrial (I): -40C to +85C - Automotive (E) (25C080): -40C to +125C
BLOCK DIAGRAM
Status Register HV Generator
EEPROM I/O Control Logic Memory Control Logic X Dec Page Latches Array
SI SO CS SCK HOLD WP VCC VSS Sense Amp. R/W Control Y Decoder
DESCRIPTION
The Microchip Technology Inc. 25AA080/25LC080/ 25C080 (25xx080*) are 8K bit serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a chip select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of chip select, allowing the host to service higher priority interrupts.
*25xx080 is used in this document as a generic part number for the 25AA080/25LC080/25C080 devices. SPI is a trademark of Motorola.
(c) 1998 Microchip Technology Inc.
DS21230B-page 1
25AA080/25LC080/25C080
1.0
1.1
ELECTRICAL CHARACTERISTICS
Maximum Ratings*
FIGURE 1-2:
AC TEST CIRCUIT
VCC
Vcc ...................................................................................7.0V All inputs and outputs w.r.t. Vss.................. -0.6V to Vcc+1.0V Storage temperature ....................................... -65C to 150C Ambient temperature under bias..................... -65C to 125C Soldering temperature of leads (10 seconds) ............. +300C ESD protection on all pins.................................................4kV
*Notice: Stresses above those listed under `Maximum ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability
2.25 K SO 1.8 K 100 pF
1.2
AC Test Conditions
AC Waveform:
TABLE 1-1:
Name CS SO SI SCK WP VSS VCC HOLD
PIN FUNCTION TABLE
Function Chip Select Input Serial Data Output Serial Data Input Serial Clock Input Write Protect Pin Ground Supply Voltage Hold Input
VLO = 0.2V VHI = VCC - 0.2V VHI = 4.0V Input Output Note 1: For VCC 4.0V 2: For VCC > 4.0V (Note 1) (Note 2) 0.5 VCC 0.5 VCC
Timing Measurement Reference Level
TABLE 1-3:
DC CHARACTERISTICS
Commercial (C): TAMB = 0C to +70C Industrial (I): TAMB = -40C to +85C Automotive (E): TAMB = -40C to +125C VCC = 1.8V to 5.5V VCC = 1.8V to 5.5V VCC = 4.5V to 5.5V (25C080 only)
All parameters apply over the specified operating ranges unless otherwise noted.
Parameter High level input voltage Low level input voltage Low level output voltage High level output voltage Input leakage current Output leakage current Internal Capacitance (all inputs and outputs)
Symbol VIH1 VIH2 VIL1 VIL2 VOL VOL VOH ILI ILO CINT ICC Read
Min 2.0 0.7 VCC -0.3 -0.3 -- -- VCC -0.5 -10 -10 -- -- -- -- -- -- --
Max VCC+1 VCC+1 0.8 0.3 VCC 0.4 0.2 -- 10 10 7 1 500 5 3 5 1
Units V V V V V V V A A pF mA A mA mA A A
Test Conditions VCC 2.7V (Note) VCC< 2.7V (Note) VCC 2.7V (Note) VCC < 2.7V (Note) IOL = 2.1 mA IOL = 1.0 mA, VCC < 2.5V IOH =-400 A CS = VCC, VIN = VSS TO VCC CS = VCC, VOUT = VSS TO VCC TAMB = 25C, CLK = 1.0 MHz, VCC = 5.0V (Note) VCC = 5.5V; FCLK=3.0 MHz; SO = Open VCC = 2.5V; FCLK=2.0 MHz; SO = Open VCC= 5.5V VCC = 2.5V CS = Vcc = 5.5V, Inputs tied to VCC or VSS CS = Vcc = 2.5V, Inputs tied to VCC or VSS
Operating Current
ICC Write ICCS
Standby Current
Note: This parameter is periodically sampled and not 100% tested.
DS21230B-page 2
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
TABLE 1-4: AC CHARACTERISTICS
Commercial (C): Industrial (I): Automotive (E): Symbol FCLK Tamb = 0C to +70C Tamb = -40C to +85C Tamb = -40C to +125C Min -- -- -- 100 250 500 150 250 475 500 30 50 50 50 100 100 -- -- 150 250 475 150 250 475 50 50 -- -- -- 0 -- -- -- 100 100 200 100 100 200 100 150 200 100 150 200 -- 1M Max 3 2 1 -- -- -- -- -- -- -- -- -- -- -- -- -- 2 2 -- -- -- -- -- -- -- -- 150 250 475 -- 200 250 500 -- -- -- -- -- -- -- -- -- -- -- -- 5 -- VCC = 1.8V to 5.5V VCC = 1.8V to 5.5V VCC = 4.5V to 5.5V (25C080 only) Units MHz MHz MHz ns ns ns ns ns ns ns ns ns ns ns ns ns s s ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms E/W Cycles (Note 2) VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V (Note 1) VCC = 4.5V to 5.5V (Note 1) VCC = 2.5V to 4.5V (Note 1) VCC = 1.8V to 2.5V (Note 1) VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V (Note 1) VCC = 2.5V to 4.5V (Note 1) VCC = 1.8V to 2.5V (Note 1) VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V (Note 1) (Note 1) VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V Test Conditions VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V VCC = 4.5V to 5.5V VCC = 2.5V to 4.5V VCC = 1.8V to 2.5V All parameters apply over the specified operating ranges unless otherwise noted. Parameter Clock Frequency
CS Setup Time
TCSS
CS Hold Time
TCSH
CS Disable Time Data Setup Time
TCSD TSU
Data Hold Time
THD
CLK Rise Time CLK Fall Time Clock High Time
TR TF THI
Clock Low Time
TLO
Clock Delay Time Clock Enable Time Output Valid from Clock Low Output Hold Time Output Disable Time
TCLD TCLE TV
THO TDIS
HOLD Setup Time
THS
HOLD Hold Time
THH
HOLD Low to Output High-Z
THZ
HOLD High to Output Valid
THV
Internal Write Cycle Time Endurance Note 1: 2:
TWC --
This parameter is periodically sampled and not 100% tested. This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our website.
(c) 1998 Microchip Technology Inc.
DS21230B-page 3
25AA080/25LC080/25C080
FIGURE 1-5:
CS THS SCK THZ SO n+2 n+1 n
high impedance
HOLD TIMING
THH
THS
THH
THV n TSU
don't care
n-1
SI HOLD
n+2
n+1
n
n
n-1
FIGURE 1-6:
SERIAL INPUT TIMING
TCSD
CS TCSS Mode 1,1 SCK Mode 0,0 Tsu SI MSB in THD LSB in TR TF TCSH
TCLE TCLD
SO
high impedance
FIGURE 1-7:
CS
SERIAL OUTPUT TIMING
TCSH
THI
TLO
Mode 1,1 Mode 0,0
SCK TV MSB out TDIS ISB out
SO
SI
don't care
DS21230B-page 4
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
2.0
2.1
PIN DESCRIPTIONS
Chip Select (CS)
2.5
Write Protect (WP)
A low level on this pin selects the device. A high level deselects the device and forces it into standby mode. However, a programming cycle which is already initiated or in progress will be completed, regardless of the CS input signal. If CS is brought high during a program cycle, the device will go in standby mode as soon as the programming cycle is complete. As soon as the device is deselected, SO goes to the high impedance state, allowing multiple parts to share the same SPI bus. A low to high transition on CS after a valid write sequence initiates an internal write cycle. After power-up, a low level on CS is required prior to any sequence being initiated.
This pin is used in conjunction with the WPEN bit in the status register to prohibit writes to the non-volatile bits in the status register. When WP is low and WPEN is high, writing to the non-volatile bits in the status register is disabled. All other operations function normally. When WP is high, all functions, including writes to the non-volatile bits in the status register operate normally. If the WPEN bit is set, WP low during a status register write sequence will disable writing to the status register. If an internal write cycle has already begun, WP going low will have no effect on the write. The WP pin function is blocked when the WPEN bit in the status register is low. This allows the user to install the 25xx080 in a system with WP pin grounded and still be able to write to the status register. The WP pin functions will be enabled when the WPEN bit is set high.
2.2
Serial Input (SI)
The SI pin is used to transfer data into the device. It receives instructions, addresses, and data. Data is latched on the rising edge of the serial clock.
2.6
Hold (HOLD)
2.3
Serial Output (SO)
The SO pin is used to transfer data out of the 25xx080. During a read cycle, data is shifted out on this pin after the falling edge of the serial clock.
2.4
Serial Clock (SCK)
The SCK is used to synchronize the communication between a master and the 25xx080. Instructions, addresses, or data present on the SI pin are latched on the rising edge of the clock input, while data on the SO pin is updated after the falling edge of the clock input.
The HOLD pin is used to suspend transmission to the 25xx080 while in the middle of a serial sequence without having to re-transmit the entire sequence over at a later time. It must be held high any time this function is not being used. Once the device is selected and a serial sequence is underway, the HOLD pin may be pulled low to pause further serial communication without resetting the serial sequence. The HOLD pin must be brought low while SCK is low, otherwise the HOLD function will not be invoked until the next SCK high to low transition. The 25xx080 must remain selected during this sequence. The SI, SCK, and SO pins are in a high impedance state during the time the part is paused and transitions on these pins will be ignored. To resume serial communication, HOLD must be brought high while the SCK pin is low, otherwise serial communication will not resume. Lowering the HOLD line at any time will tri-state the SO line.
(c) 1998 Microchip Technology Inc.
DS21230B-page 5
25AA080/25LC080/25C080
3.0
3.1
FUNCTIONAL DESCRIPTION
PRINCIPLES OF OPERATION
3.3
Write Sequence
The 25xx080 are 1024 byte Serial EEPROMs designed to interface directly with the Serial Peripheral Interface (SPI) port of many of today's popular microcontroller families, including Microchip's PIC16C6X/7X microcontrollers. It may also interface with microcontrollers that do not have a built-in SPI port by using discrete I/O lines programmed properly with the software. The 25xx080 contains an 8-bit instruction register. The part is accessed via the SI pin, with data being clocked in on the rising edge of SCK. The CS pin must be low and the HOLD pin must be high for the entire operation. The WP pin must be held high to allow writing to the memory array. Table 3-1 contains a list of the possible instruction bytes and format for device operation. All instructions, addresses, and data are transferred MSB first, LSB last. Data is sampled on the first rising edge of SCK after CS goes low. If the clock line is shared with other peripheral devices on the SPI bus, the user can assert the HOLD input and place the 25xx080 in `HOLD' mode. After releasing the HOLD pin, operation will resume from the point when the HOLD was asserted.
Prior to any attempt to write data to the 25xx080, the write enable latch must be set by issuing the WREN instruction (Figure 3-5). This is done by setting CS low and then clocking out the proper instruction into the 25xx080. After all eight bits of the instruction are transmitted, the CS must be brought high to set the write enable latch. If the write operation is initiated immediately after the WREN instruction without CS being brought high, the data will not be written to the array because the write enable latch will not have been properly set. Once the write enable latch is set, the user may proceed by setting the CS low, issuing a write instruction, followed by the 16-bit address, with the six MSBs of the address being don't care bits, and then the data to be written. Up to 16 bytes of data can be sent to the 25xx080 before a write cycle is necessary. The only restriction is that all of the bytes must reside in the same page. A page address begins with XXXX XXXX XXXX 0000 and ends with XXXX XXXX XXXX 1111. If the internal address counter reaches XXXX XXXX XXXX 1111 and the clock continues, the counter will roll back to the first address of the page and overwrite any data in the page that may have been written. For the data to be actually written to the array, the CS must be brought high after the least significant bit (D0) of the nth data byte has been clocked in. If CS is brought high at any other time, the write operation will not be completed. Refer to Figure 3-3 and Figure 3-4 for more detailed illustrations on the byte write sequence and the page write sequence respectively. While the write is in progress, the status register may be read to check the status of the WPEN, WIP, WEL, BP1, and BP0 bits (Figure 3-7). A read attempt of a memory array location will not be possible during a write cycle. When the write cycle is completed, the write enable latch is reset.
3.2
Read Sequence
The part is selected by pulling CS low. The 8-bit read instruction is transmitted to the 25xx080 followed by the 16-bit address, with the six MSBs of the address being don't care bits. After the correct read instruction and address are sent, the data stored in the memory at the selected address is shifted out on the SO pin. The data stored in the memory at the next address can be read sequentially by continuing to provide clock pulses. The internal address pointer is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached (03FFh), the address counter rolls over to address 0000h allowing the read cycle to be continued indefinitely. The read operation is terminated by raising the CS pin (Figure 3-2).
TABLE 3-1:
READ WRITE WRDI WREN RDSR WRSR
INSTRUCTION SET
Instruction Format 0000 0011 0000 0010 0000 0100 0000 0110 0000 0101 0000 0001 Description Read data from memory array beginning at selected address Write data to memory array beginning at selected address Reset the write enable latch (disable write operations) Set the write enable latch (enable write operations) Read status register Write status register
Instruction Name
DS21230B-page 6
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
FIGURE 3-2:
CS 0 SCK instruction SI 0 0 0 0 0 0 1 16 bit address 1 15 14 13 12 2 1 0 data out 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
READ SEQUENCE
high impedance SO
FIGURE 3-3:
CS
BYTE WRITE SEQUENCE
Twc 0 SCK instruction SI 0 0 0 0 0 0 1 16 bit address 0 15 14 13 12 2 1 0 7 6 data byte 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
high impedance SO
FIGURE 3-4:
CS 0 SCK
PAGE WRITE SEQUENCE
1
2
3
4
5
6
7
8
9 10 11 16 bit address
21 22 23 24 25 26 27 28 29 30 31 data byte 1 2 1 0 7 6 5 4 3 2 1 0
instruction SI 0 0 0 0 0 01
0 15 14 13 12
CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCK data byte 2 SI 7 6 5 4 3 2 1 0 7 6 data byte 3 5 4 3 2 1 0 7 data byte n (16 max) 6 5 4 3 2 1 0
(c) 1998 Microchip Technology Inc.
DS21230B-page 7
25AA080/25LC080/25C080
3.4 Write Enable (WREN) and Write Disable (WRDI)
The following is a list of conditions under which the write enable latch will be reset: * * * * Power-up WRDI instruction successfully executed WRSR instruction successfully executed WRITE instruction successfully executed
The 25xx080 contains a write enable latch. See Table 3-10 for the Write Protect Functionality Matrix. This latch must be set before any write operation will be completed internally. The WREN instruction will set the latch, and the WRDI will reset the latch.
FIGURE 3-5:
WRITE ENABLE SEQUENCE
CS
0 SCK
1
2
3
4
5
6
7
SI
0
0
0
0
0
1
1
0
high impedance SO
FIGURE 3-6:
WRITE DISABLE SEQUENCE
CS
0 SCK
1
2
3
4
5
6
7
SI
0
0
0
0
0
1
0 1
0
high impedance SO
DS21230B-page 8
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
3.5 Read Status Register (RDSR)
The RDSR instruction provides access to the status register. The status register may be read at any time, even during a write cycle. The status register is formatted as follows: 7 WPEN 6 X 5 X 4 X 3 BP1 2 BP0 1 WEL 0 WIP The Write Enable Latch (WEL) bit indicates the status of the write enable latch. When set to a `1' the latch allows writes to the array, when set to a `0' the latch prohibits writes to the array. The state of this bit can always be updated via the WREN or WRDI commands regardless of the state of write protection on the status register. This bit is read only. The Block Protection (BP0 and BP1) bits indicate which blocks are currently write protected. These bits are set by the user issuing the WRSR instruction. These bits are non-volatile. See Figure 3-7 for the RDSR timing sequence.
The Write-In-Process (WIP) bit indicates whether the 25xx080 is busy with a write operation. When set to a `1' a write is in progress, when set to a `0' no write is in progress. This bit is read only.
FIGURE 3-7:
CS
READ STATUS REGISTER SEQUENCE
0 SCK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
instruction SI 0 0 0 0 0 1 0 1
high impedance SO 7 6
data from status register 5 4 3 2 1 0
(c) 1998 Microchip Technology Inc.
DS21230B-page 9
25AA080/25LC080/25C080
3.6 Write Status Register(WRSR)
The WRSR instruction allows the user to select one of four levels of protection for the array by writing to the appropriate bits in the status register. The array is divided up into four segments. The user has the ability to write protect none, one, two, or all four of the segments of the array. The partitioning is controlled as illustrated in Table 3-8. The Write Protect Enable (WPEN) bit is a non-volatile bit that is available as an enable bit for the WP pin. The Write Protect (WP) pin and the Write Protect Enable (WPEN) bit in the status register control the programmable hardware write protect feature. Hardware write protection is enabled when WP pin is low and the WPEN bit is high. Hardware write protection is disabled when either the WP pin is high or the WPEN bit is low. When the chip is hardware write protected, only writes to non-volatile bits in the status register are disabled. See Table 3-3 for a matrix of functionality on the WPEN bit. See Figure 3-9 for the WRSR timing sequence.
TABLE 3-8:
BP1 0 0 1 1
ARRAY PROTECTION
BP0 0 1 0 1 Array Addresses Write Protected none upper 1/4 (0300h - 03FFh) upper 1/2 (0200h - 03FFh) all (0000h - 03FFh)
FIGURE 3-9:
CS
WRITE STATUS REGISTER SEQUENCE
0 SCK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
instruction SI 0 0 0 0 0 0 0 1 7 6
data to status register 5 4 3 2 1 0
high impedance SO
DS21230B-page 10
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
3.7 Data Protection 3.8 Power On State
The following protection has been implemented to prevent inadvertent writes to the array: * The write enable latch is reset on power-up. * A write enable instruction must be issued to set the write enable latch. * After a byte write, page write, or status register write, the write enable latch is reset. * CS must be set high after the proper number of clock cycles to start an internal write cycle. * Access to the array during an internal write cycle is ignored and programming is continued. The 25xx080 powers on in the following state: * The device is in low power standby mode (CS = 1). * The write enable latch is reset. * SO is in high impedance state. * A high to low level transition on CS is required to enter active state.
TABLE 3-10:
WPEN X 0 1 X
WRITE PROTECT FUNCTIONALITY MATRIX
WP X X Low High WEL 0 1 1 1 Protected Blocks Protected Protected Protected Protected Unprotected Blocks Protected Writable Writable Writable Status Register Protected Writable Protected Writable
(c) 1998 Microchip Technology Inc.
DS21230B-page 11
25AA080/25LC080/25C080
NOTES:
DS21230B-page 12
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
NOTES:
(c) 1998 Microchip Technology Inc.
DS21230B-page 13
25AA080/25LC080/25C080
NOTES:
DS21230B-page 14
(c) 1998 Microchip Technology Inc.
25AA080/25LC080/25C080
25AA080/25LC080/25C080 PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.. 25AA080/25LC080/25C080 -- Package: P SN ST OT = = = = Plastic DIP (300 mil Body), 8-lead Plastic SOIC (150 mil Body) TSSOP, 8-lead SOT-23, 5 lead
Temperature Range:
Blank = 0C to +70C I = -40C to +85C E = -40C to +125C 25AA080 25AA080T 25LC080 25LC080T 25C080 25C080T 128 bit 1.8V I2C Serial EEPROM 128 bit 1.8V K I2C Serial EEPROM (Tape and Reel) 128 bit 2.5V I2C Serial EEPROM 128 bit 2.5V K I2C Serial EEPROM (Tape and Reel) 128 bit 5.0V I2C Serial EEPROM 128 bit 5.0V K I2C Serial EEPROM (Tape and Reel)
Device:
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (602) 786-7277 3. The Microchip's Bulletin Board, via your local CompuServe number (CompuServe membership NOT required). Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
(c) 1998 Microchip Technology Inc.
DS21230B-page 15
M
WORLDWIDE SALES AND SERVICE
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San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
Microchip received ISO 9001 Quality System certification for its worldwide headquarters, design, and wafer fabrication facilities in January, 1997. Our field-programmable PICmicroTM 8-bit MCUs, Serial EEPROMs, related specialty memory products and development systems conform to the stringent quality standards of the International Standard Organization (ISO).
All rights reserved. (c) 1998, Microchip Technology Incorporated, USA. 7/98
Printed on recycled paper.
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DS21230B-page 16
(c) 1998 Microchip Technology Inc.

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